Secondary Ion Mass Spectrometry (SIMS)

Secondary Ion Mass Spectrometry (SIMS) is one of the most sensitive analytical techniques available for elemental and isotopic analysis of thin films and semiconductor materials. At JP Analytical, SIMS enables ultra-trace detection and high-resolution depth profiling, providing critical insight into dopant distributions, contamination, and interface chemistry that directly impact device performance and yield.

By sputtering the sample surface with a focused primary ion beam and analyzing the emitted secondary ions, SIMS reveals compositional variations from the near surface down to buried interfaces with exceptional sensitivity — often reaching parts-per-billion levels.

Key Capabilities

Ultra-trace elemental detection for dopants and contaminants

High-resolution depth profiling of multilayer thin films

Isotopic analysis for process monitoring and research studies

Detection of light elements including hydrogen, lithium, and boron

Quantitative profiling when combined with standards and complementary metrology

SIMS is especially valuable for advanced semiconductor structures, ALD/CVD thin films, and emerging materials where precise control of dopant concentration and impurity levels is essential.

Applications

• Dopant profiling in semiconductor devices

• Interface analysis and diffusion studies

• Contamination monitoring in fabrication processes

• Battery and energy material characterization

• Hydrogen and light-element depth profiling

Why Combine SIMS with Ion Beam Analysis?

While SIMS offers unparalleled sensitivity, combining it with techniques such as RBS and HFS strengthens quantitative confidence. RBS provides absolute composition and thickness calibration, while SIMS reveals trace-level impurities and fine depth features — together delivering a more complete materials picture for advanced R&D and failure analysis.